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| PD57030-E PD57030S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features Excellent thermal stability Common source configuration POUT = 30W with 14dB gain @ 945MHz / 28V New RF plastic package PowerSO-10RF (formed lead) Description The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. PD57030 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030's superior linearity performance makes it an ideal solution for base station applications. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Gate Drain Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number PD57030-E PD57030S-E PD57030TR-E PD57030STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel August 2006 Rev 1 1/18 www.st.com 18 Contents PD57030-E, PD57030S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 7 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 PD57030-E, PD57030S-E Electrical data 1 1.1 Electrical data Maximum ratings Table 1. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70C) Max. operating junction temperature Storage temperature Value 65 20 4 52.8 165 -65 to +150 Unit V V A W C C 1.2 Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 1.8 Unit C/W 3/18 Electrical characteristics PD57030-E, PD57030S-E 2 Electrical characteristics TCASE = +25 oC 2.1 Static Table 3. Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Static Test conditions IDS = 10mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3A VDS = 28 V VDS = 28 V VDS = 28V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 57 30 2.3 Min 65 1 1 5.0 Typ Max Unit V A A V V mho pF pF pF 2.2 Dynamic Table 4. Symbol POUT GP VDS = 28V VDS = 28V VDS = 28V Dynamic Test conditions IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA f = 945 MHz POUT = 30 W f = 945 MHz POUT = 30 W f = 945 MHz POUT = 30 W f = 945 MHz Min 30 13 45 10:1 14 53 Typ Max Unit W dB % VSWR D IDQ = 50 mA Load VDS = 28V mismatch ALL PHASE ANGLES 4/18 PD57030-E, PD57030S-E Impedance 3 Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) 925 945 960 ZIN () 0.929 - j 0.315 0.809 - j 0.085 0.763 - j 0.428 ZDL() 2.60 + j 1.45 2.46 + j 0.492 2.35 + j 0.591 5/18 Typical performance PD57030-E, PD57030S-E 4 Figure 2. Typical performance Capacitance vs supply voltage Figure 3. Drain current vs gate source voltage C (pF) 100 Ciss Coss Id (A) 5 4 3 10 2 Crss 1 1 0 5 10 15 20 25 30 0 2 3 4 5 6 7 Vdd (V) Vgs (V) Figure 4. Gate-source voltage vs case temperature Vgs (Normalized) 1.05 Id = 3A Id = 2.5A 1 Id = 2A Id = 1.5A Id = 1A 0.95 Id = 500mA Id = 250mA Vds = 10V 0.9 -50 0 50 100 150 Tc (C) 6/18 PD57030-E, PD57030S-E Typical performance PD57030S Figure 5. Pout (W) 50 945 MHz Output power vs input power Figure 6. IRL (dB) 5 Input return loss vs output power 0 40 925 MHz 960 MHz -5 30 -10 960 MHz 20 -15 945 MHz -20 10 Vdd = 28V Idq = 50mA 925 MHz -25 Vdd = 28V Idq = 50mA 0 0 0.5 1 1.5 2 -30 0 10 20 30 40 50 Pin (W) Pout (W) Figure 7. Pg (dB) 18 Power gain vs output power Figure 8. Eff (%) 70 Efficiency vs output power 16 925 MHz 60 14 960 MHz 945 MHz 960 MHz 12 50 925 MHz 945 MHz 10 40 8 30 6 Vdd = 28V Idq = 50mA Vdd = 28V Idq = 50mA 4 0 10 20 30 40 50 20 0 10 20 30 40 50 Pout (W) Pout (W) 7/18 Typical performance Figure 9. Pout (W) 35 925 MHz 925 MHz 945 MHz PD57030-E, PD57030S-E Figure 10. Efficiency vs bias current Eff (%) 60 945 MHz Output power vs bias current 30 960 MHz 50 960 MHz 25 40 20 30 15 Pin = 29.1dBm Vdd = 28V 20 Pin = 29.1dBm Vdd = 28V 10 0 100 200 300 400 500 10 0 100 200 300 400 500 Idq (mA) Idq (mA) Figure 11. Output power vs drain voltage Pout (W) 35 945 MHz Figure 12. Efficiency vs drain voltage Eff (%) 60 925 MHz 945 MHz 30 50 925 MHz 960 MHz 25 960 MHz 40 20 30 15 10 Pin = 29.1dBm Idq = 50mA 20 Pin = 29.1dBm Idq = 50mA 5 10 15 20 25 30 10 10 15 20 25 30 Vdd (V) Vdd (V) 8/18 PD57030-E, PD57030S-E Figure 13. Output power vs gate-source voltage Pout (W) 40 Typical performance 925 MHz 30 945 MHz 20 960 MHz 10 Pin = 29.1dBm Vdd = 28V 0 0 1 2 3 4 5 Vgs (V) 9/18 Test circuit PD57030-E, PD57030S-E 5 Test circuit Figure 14. Test circuit schematic VGG + + + + VD D RF IN RF OUT Table 6. C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 R1 R2 R3 FB1, FB2 L1, L2 Test circuit component part list Description 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1F / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10F / 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220F / 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 18K, 1W SURFACE MOUNT CHIP RESISTOR 4.7M, 1W SURFACE MOUNT CHIP RESISTOR 120, 2W SURFACE MOUNT CHIP RESISTOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE Component 10/18 PD57030-E, PD57030S-E Figure 15. Test circuit photomaster Test circuit PD57030S 6.4 inches Figure 16. Test circuit 4 inches 11/18 Package mechanical data PD57030-E, PD57030S-E 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/18 PD57030-E, PD57030S-E Table 7. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 0 3.4 1.2 0.15 Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data mm. Typ. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 1.1 0.25 0.031 5 deg 6 deg 10 deg 8 deg 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 Max. 0.1 3.6 1.4 0.25 Min. 0. 0.134 0.046 0.005 Inch Typ. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 Max. 0.0038 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 17. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 13/18 Package mechanical data Table 8. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 0.8 6 deg 10 deg 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 1.62 3.4 1.2 0.15 PD57030-E, PD57030S-E PowerSO-10RF Straight Lead Mechanical data mm. Typ. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 Max. 1.72 3.6 1.4 0.25 Min. 0.064 0.134 0.046 0.005 Inch Typ. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 Max. 0.068 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 18. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 14/18 PD57030-E, PD57030S-E Figure 19. Tube information Package mechanical data 15/18 Package mechanical data Figure 20. Reel information PD57030-E, PD57030S-E 16/18 PD57030-E, PD57030S-E Revision history 7 Revision history Table 9. Date 07-Aug-2006 Revision history Revision 1 Initial release. Changes 17/18 PD57030-E, PD57030S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 |
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